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VISHAY
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
* * * * Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package 5300 VRMS isolation test voltage
A C NC
1 2 3
6B 5C 4E
Agency Approvals
* UL File #E52744 System Code H or J * CSA 93751 * BSI IEC60950 IEC60965 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO
i179004
Applications
AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection
These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Footnotes
Designing with data sheet is covered in Application Note 45.
Order Information
Part H11A1 H11A2 H11A3 H11A4 H11A5 H11A1-X006 H11A1-X007 H11A1-X009 Remarks CTR > 50 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 30 %, DIP-6 CTR > 50 %, DIP-6 400 mil (option 6) CTR > 50 %, SMD-6 (option 7) CTR > 50 %, SMD-6 (option 9)
Description
The H11Ax family is an Industry Standard Single Channel Phototransistor Coupler. It includes the H11A1/ H11A2/ H11A3/ H11A4/ H11A5 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available is by ordering option 1.
For additional information on the available options refer to Option Information.
Document Number 83730 Rev. 1.3, 16-Apr-04
www.vishay.com 1
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current (t < 1.0 ms) Power dissipation Test condition Symbol VCEO VEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303,part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s dip soldering: distance to seating plane 1.5 mm RIO RIO Tamb Tstg Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm
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Document Number 83730 Rev. 1.3, 16-Apr-04
VISHAY
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Test condition IF = 10 mA Part H11A1 H11A2 H11A3 H11A4 H11A5 Reverse current Capacitance VR = 3.0 V VR = 0, f = 1.0 MHz Symbol VF VF VF VF VF IR CO 50 Min Typ. 1.1 1.1 1.1 1.1 1.1 Max 1.5 1.5 1.5 1.5 1.7 10 Unit V V V V V A pF
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Collector-emitter capacitance Test condition IC = 1.0 mA, IF = 0 mA IE = 100 A, IF = 0 mA IC = 10 A, IF = 0 mA VCE = 10 V, IF = 0 mA VCE = 0 Symbol BVCEO BVECO BVCBO ICEO CCE Min 30 7.0 70 5.0 6.0 50 Typ. Max Unit V V V nA pF
Coupler
Parameter Saturation voltage, collectoremitter Capacitance (input-output) Test condition ICE = 0.5 mA, IF = 10 mA Symbol VCEsat CIO 0.5 Min Typ. Max 0.4 Unit V pF
Current Transfer Ratio
Parameter DC Current Transfer Ratio Test condition VCE = 10 V, IF = 10 mA Part H11A1 H11A2 H11A3 H11A4 H11A5 Symbol CTRDC CTRDC CTRDC CTRDC CTRDC Min 50 20 20 10 30 Typ. Max Unit % % % % %
Document Number 83730 Rev. 1.3, 16-Apr-04
www.vishay.com 3
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors Switching Characteristics
Parameter Switching time Test condition IC = 2 mA, RL = 100 , VCE = 10 V Symbol ton, toff Min Typ. 3.0 Max
VISHAY
Unit s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4
VF - Forward Voltage - V
1.5 TA = -55C TA = 25C
NCTR - Normalized CTR
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
i4n25_01
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.0
TA=50C
0.5
NCTR(SAT) NCTR
TA = 85C
0.0 1 10 IF - Forward Current - mA 100
i4n25_03
.1
1 10 IF- LED Current - mA
100
Fig. 1 Forward Voltage vs. Forward Current
Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED Current
1.5
NCTR - Normlized CTR NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.5
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.0
TA=25C
1.0
TA=70C
0.5
NCTR(SAT) NCTR
0.5
NCTR(SAT) NCTR
0.0 0
i4n25_02
0.0 .1 100
i4n25_04
1 10 IF - LED Current - mA
1 10 IF - LED Current - mA
100
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Current
Fig. 4 Normalized Non-saturated and saturated CTR vs. LED Current
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Document Number 83730 Rev. 1.3, 16-Apr-04
VISHAY
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors
1.5
NCTR - Normalized CTR
NCTRcb - Normalized CTRcb
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V
1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C
1.0
TA=85C
1.0
0.5
NCTR(SAT) NCTR
0.5 25C 50C 70C 0.0 .1 1 10 100
0.0 .1 1 10 IF - LED Current - mA 100
IF - LED Current - mA
i4n25_08
i4n25_05
Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Current
Fig. 8 Normalized CTRcb vs. LED Current and Temp.
35
Ice - Collector Current - mA
10
Normalized to: IF=10 mA, TA=25C
30 25 20 15 10 5 0 0 10 20 30 40 50 60 IF - LED Current - mA 70C 25C 85C 50C
Normalized Photocurrent
1
1 0.
Nib, TA=-20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C
0.01 .1
i4n25_09
1
10
100
i4n25_06
IF - LED Current - mA
Fig. 6 Collector-Emitter Current vs. Temperature and LED Current
Fig. 9 Normalized Photocurrent vs. IF and Temp.
10
Iceo - Collector-Emitter - nA
5 4
1.2
NHFE - Normalized HFE
70C
10 10
3
1.0 -20C 0.8
25C
10 2 10 10
1 0
Vce = 10 V Typical
0.6
Normalized to: Ib=20 A, Vce=10 V, TA=25C
10 -1 10 -2 -20 0 20 40 60 80 100
0.4
i4n25_10
1
TA - Ambient Temperature - C
i4n25_07
10 100 Ib - Base Current - A
1000
Fig. 7 Collector-Emitter Leakage Current vs.Temp.
Fig. 10 Normalized Non-saturated HFE vs. Base Current and Temperature
Document Number 83730 Rev. 1.3, 16-Apr-04
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H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors
VISHAY
NHFE(sat) - Normalized Saturated HFE
1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C
F=10 KHz, DF=50% VCC = 5.0 V RL VO IF=1 0 mA
70C 1.0 25C -20C 0.5
50C
Vce=0.4 V 0.0 1 10 100 1000
i4n25_14
i4n25_11
Ib - Base Current - A
Fig. 11 Normalized HFE vs. Base Current and Temp.
Fig. 14 Switching Schematic
1000
tPLH - Propagation Delay - s
2.5
tPHL - Propagation Delay - s
IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0
10 tPLH
1.5
1 .1
i4n25_12
1.0 1 10 100
RL - Collector Load Resistor - k
Fig. 12 Propagation Delay vs. Collector Load Resistor
IF
VO
tD
tR
tPLH VTH=1.5 V
tPHL
tS
tF
i4n25_13
Fig. 13 Switching Timing
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Document Number 83730 Rev. 1.3, 16-Apr-04
VISHAY
H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
3 .248 (6.30) .256 (6.50) 4
2
1
5
6
ISO Method A
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18450
Document Number 83730 Rev. 1.3, 16-Apr-04
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H11A1/ H11A2/ H11A3/ H11A4/ H11A5
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83730 Rev. 1.3, 16-Apr-04
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